MODELING AND SIMULATION OF A CuGaSe2/Cu(In1-x,Gax)Se2 TANDEM SOLAR CELL
نویسندگان
چکیده
Device modeling and simulation of a mechanically stacked CuGaSe2/Cu(In1-x,Gax)Se2 (CGS/CIGS) tandem solar cell have been carried out in this study. The physical model consists of a CIGS bottom cell with a double graded band-gap profile in the space charge region (SCR) and the backside of the absorber layer and a uniform band-gap CGS top cell. By varying the absorber layer thickness of the CGS top cell, it is shown that the CGS/CIGS tandem cell could achieve an AM 1.5G conversion efficiency of 25% with an optimized CGS and CIGS cell structure. A comparison of our simulation results with the published data for the CIGS cells shows an excellent agreement between the simulated results and the published photocurrent density-voltage (JV) and quantum efficiency (Q.E.) data for the CIGS cells.
منابع مشابه
Device Modeling and Simulation of the Performance of Cu(In1-x,Gax)Se2 Solar Cells
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